Datasheet.kr   

FDC6303N 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FDC6303N은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 FDC6303N 자료 제공

부품번호 FDC6303N 기능
기능 Digital FET/ Dual N-Channel
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


FDC6303N 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 4 페이지수

미리보기를 사용할 수 없습니다

FDC6303N 데이터시트, 핀배열, 회로
August 1997
FDC6303N
Digital FET, Dual N-Channel
General Description
These dual N-Channel logic level enhancement mode field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance. This device has been designed especially for
low voltage applications as a replacement for digital
transistors in load switching applications. Since bias
resistors are not required this one N-Channel FET can
replace several digital transistors with different bias
resistors like the IMHxA series.
Features
25 V, 0.68 A continuous, 2 A Peak.
RDS(ON) = 0.6 @ VGS = 2.7 V
RDS(ON) = 0.45 @ VGS= 4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1.5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple NPN digital transistors (IMHxA series)
with one DMOS FET.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
Mark: .303
SO-8
SOT-223
SOIC-16
43
52
61
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current
- Continuous
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ,TSTG
ESD
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case
(Note 1)
© 1997 Fairchild Semiconductor Corporation
FDC6303N
25
8
0.68
2
0.9
0.7
-55 to 150
6.0
140
60
Units
V
V
A
W
°C
kV
°C/W
°C/W
FDC6303N Rev.C




FDC6303N pdf, 반도체, 판매, 대치품
Typical Electrical And Thermal Characteristics
5
ID = 0.5A
4
3
VDS = 5V
15V
10V
2
1
0
0 0.4 0.8 1.2 1.6 2
Qg , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
150
100
50 Ciss
20
f = 1 MHz
10 VGS = 0V
Coss
Crss
5
0.1
0.5 1
2
5 10
25
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
5
1
0.3
0.1
0.03
0.01
0.1
RDS(ON) LIMIT
VGS = 4.5V
SINGLE PULSE
R θJA = See note 1b
TA = 25°C
1m1s00µs
10ms
DC 1s100ms
0.2
0.5 1
2
5 10 20
VDS , DRAI N-SOURCE VOLTAGE (V)
40
Figure 9. Maximum Safe Operating Area.
5
4 SINGLE PULSE
RθJA =See note 1b
TA = 25°C
3
2
1
0
0.01
0.1 1 10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5 D = 0.5
0.2
0.1
0.05
0.02
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
t 1, TIME (sec)
1
RθJA (t) = r(t) * R θJA
R θJA = See Note 1b
P(pk)
t1 t 2
TJ - TA = P * R θJA(t)
Duty Cycle, D = t 1/ t 2
10 100
300
Figure 11. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
FDC6303N Rev.C

4페이지












구       성 총 4 페이지수
다운로드[ FDC6303N.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
FDC6303

Digital FET/ Dual N-Channel

Fairchild Semiconductor
Fairchild Semiconductor
FDC6303N

Digital FET/ Dual N-Channel

Fairchild Semiconductor
Fairchild Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵