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FDC6306P 데이터시트 PDF




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부품번호 FDC6306P 기능
기능 Dual P-Channel 2.5V Specified PowerTrench MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FDC6306P 데이터시트, 핀배열, 회로
February 1999
FDC6306P
Dual P-Channel 2.5V Specified PowerTrenchMOSFET
General Description
Features
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain low gate charge for
superior switching performance.
-1.9 A, -20 V. RDS(on) = 0.170 @ VGS = -4.5 V
RDS(on) = 0.250@ VGS = -2.5 V
Low gate charge (3 nC typical).
These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.
Applications
Load switch
Battery protection
Power management
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
D2
S1
D1
SuperSOT TM-6
G2
S2
G1
43
52
61
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Ratings
-20
±8
-1.9
-5
0.96
0.9
0.7
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
°C/W
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.306
FDC6306P
7’’
Tape Width
8mm
Quantity
3000 units
©1999 Fairchild Semiconductor Corporation
FDC6306P Rev. C




FDC6306P pdf, 반도체, 판매, 대치품
Typical Characteristics (continued)
5
I D = -1.9A
4
3
VDS = -5V
-15V
-10V
2
1
0
0123
Qg , GAT E CHARGE (nC)
4
1000
300
Ciss
Coss
100
f = 1 MHz
VGS = 0 V
30
0.1
0.2
0.5 1
2
5
-VDS , DRAIN T O SOURCE VOLTAGE (V)
Crss
10 20
Figure 7. Gate-Charge Characteristics.
30
10
3 RDS(ON) LIMIT
1
0.3
VGS = -4.5V
0.1 SINGLE PULSE
RθJA = 180°C/W
0.03 T A = 25°C
100us
1ms
10ms
1s100ms
DC
0.01
0.1 0.2
0.5 1
2
5 10 20
-VDS , DRAIN-SOURCE VOLTAGE (V)
50
Figure 8. Capacitance Characteristics.
5
4 SINGLE PULSE
R θJA=180°C/W
TA = 25°C
3
2
1
0
0.01
0.1 1 10
SINGLE PULSE TIME (SEC)
100 300
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5 D = 0.5
0.2
0.1
0.05
0.02
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
R θJA (t) = r(t) * R θJA
RθJA =180°C/W
P(pk)
t1
t2
TJ - T A = P * R θJA (t)
Duty Cycle, D = t 1 / t 2
10 100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDC6306P Rev. C

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FDC6306P 전자부품, 판매, 대치품
SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SuperSOT -6 (FS PKG Code 31, 33)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0158
1998 Fairchild Semiconductor Corporation
September 1998, Rev. A

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FDC6306P

Dual P-Channel 2.5V Specified PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

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