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부품번호 | FDC6310P 기능 |
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기능 | Dual P-Channel 2.5V Specified PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
April 2001
FDC6310P
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the bigger more expensive SO-8
and TSSOP-8 packages are impractical.
Applications
• Load switch
• Battery protection
• Power management
Features
• –2.2 A, –20 V. RDS(ON) = 125 mΩ @ VGS = –4.5 V
RDS(ON) = 190 mΩ @ VGS = –2.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• SuperSOT TM -6 package: small footprint 72%
smaller than standard SO-8); low profile (1mm thick)
D2
S1
D1
SuperSOT TM-6
G2
S2
G1
43
52
61
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.310
FDC6310P
7’’
©2001 Fairchild Semiconductor Corporation
Ratings
–20
±12
–2.2
–6
0.96
0.9
0.7
–55 to +150
130
60
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
FDC6310P Rev C(W)
Typical Characteristics
5
ID = -2.2A
4
3
VDS =- 5V
-10V
-15V
2
1
0
0 123 45
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10 RDS(ON) LIMIT
10ms
1
VGS = -4.5V
0.1 SINGLE PULSE
RθJA = 180oC/W
TA = 25oC
100ms
1s
10s
DC
0.01
0.1 1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
600
500
400
300
200
100
0
0
C ISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
5
SINGLE PULSE
4 RθJA = 180°C/W
TA = 25°C
3
2
1
0
0.01
0.1
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 180°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
10 100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
1000
FDC6310P Rev C(W)
4페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDC6310P | Dual P-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |