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부품번호 | FDC6318 기능 |
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기능 | Dual P-Channel 1.8V PowerTrench Specified MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
December 2001
FDC6318P
Dual P-Channel 1.8V PowerTrench Specified MOSFET
General Description
These P-Channel 1.8V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
Applications
• Power management
• Load switch
Features
• –2.5 A, –12 V. RDS(ON) = 90 mΩ @ VGS = –4.5 V
RDS(ON) = 125 mΩ @ VGS = –2.5 V
RDS(ON) = 200 mΩ @ VGS = –1.8 V
• High performance trench technology for extremely
low RDS(ON)
• SuperSOTTM-6 package: small footprint (72%
smaller than standard SO-8); low profile (1mm thick)
D2
S1
D1
SuperSOT TM-6
G2
S2
G1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.318
FDC6318P
13’’
4
5
6
Ratings
–12
±8
–2.5
–7
0.96
0.9
0.7
–55 to +150
130
60
Tape width
12mm
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDC6318P Rev D (W)
Typical Characteristics
5
ID = -2.5A
4
3
VDS = -4V
-6V
-8V
2
1
0
0246
Qg, GATE CHARGE (nC)
8
Figure 7. Gate Charge Characteristics.
100
10 RDS(ON) LIMIT
1
VGS = -4.5V
SINGLE PULSE
0.1 RθJA = 130oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
800
600
400
200
0
0
CISS
f = 1 MHz
VGS = 0 V
COSS
CRSS
369
-VDS, DRAIN TO SOURCE VOLTAGE (V)
12
Figure 8. Capacitance Characteristics.
20
SINGLE PULSE
RθJA = 130°C/W
TA = 25°C
15
10
5
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 130oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.00001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC6318P Rev D (W)
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부품번호 | 상세설명 및 기능 | 제조사 |
FDC6310P | Dual P-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
FDC6312P | Dual P-Channel 1.8V PowerTrench Specified MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |