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FDC6323 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FDC6323은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 FDC6323 기능
기능 Integrated Load Switch
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FDC6323 데이터시트, 핀배열, 회로
March 1999
FDC6323L
Integrated Load Switch
General Description
These Integrated Load Switches are produced using
Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is
especially tailored to minimize on-state resistance and
provide superior switching performance. These
devices are particularly suited for low voltage high
side load switch application where low conduction loss
and ease of driving are needed.
Features
VDROP=0.2V @ VIN=5V, IL=1A, VON/OFF= 1.5V to 8V
VDROP=0.3V @ VIN=3.3V, IL=1A, VON/OFF= 1.5V to 8V.
High density cell design for extremely low on-resistance.
VON/OFF Zener protection for ESD ruggedness.
>6KV Human Body Model.
SuperSOTTM-6 package design using copper lead frame
for superior thermal and electrical capabilities.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
pin 1
SuperSOT TM-6
Vin,R1 4
O N / O FF 5
R1,C1 6
Q2
Q1
3 Vout,C1
2 Vout,C1
IN
EQUIVALENT CIRCUIT
+VDROP -
1 R2
O N / O FF
OUT
See Application Circuit
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VIN
VON/OFF
IL
Input Voltage Range
On/Off Voltage Range
Load Current @ VDROP=0.5V - Continuous (Note 1)
- Pulsed
(Note 1 & 3)
PD
TJ,TSTG
ESD
Maximum Power Dissipation
(Note 2a)
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm)
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 2a)
RθJC Thermal Resistance, Junction-to-Case (Note 2)
© 1999 Fairchild Semiconductor Corporation
FDC6323L
3-8
1.5 - 8
1.5
2.5
0.7
-55 to 150
6
180
60
Units
V
V
A
W
°C
kV
°C/W
°C/W
FDC6323L Rev.F




FDC6323 pdf, 반도체, 판매, 대치품
Typical Electrical Characteristics (TA = 25 OC unless otherwise noted )
50
40
30
20
10
0
0
Vin = 5V
IL = 1A
Von/off = 3.3V
R1 = 20K
Ci = 10µ F
Co = 1 µ F
2
46
R2 (K)
td(off)
tf
tr
td(on)
8 10
Figure 6. Switching Variation with
R2 at Vin=5V and R1=20KOhm.
50
Vin = 3.3V
IL = 1A
40 Von/off = 3.3V
R1 = 20K
Ci = 10 µ F
30 Co = 1 µ F
td(off)
20 tf
10 tr
td(on)
0
0 2 4 6 8 10
R2 (K)
Figure 7. Switching Variation with R2
at Vin=3.3V and R1=20KOhm.
50
Vin = 2.5V
IL = 1A
40
Von/off = 3.3V
R1 = 20K
Ci = 10 µ F
Co = 1µ F
30
20
10
0
02
46
R2 (K)
tr
tf
td(off)
td(on)
8 10
Figure 8. Switching Variation with R2
at Vin=2.5V and R1=20KOhm.
500
IL = 1A
Von/off = 3.3V
400 R1 = 20K
Ci = 10 µF
Co = 1µ F
300
200
Vin = 2.5V
3.3V
5V
100
0
0 20 40 60 80 100
R2 (K)
Figure 10. Vdrop Variation with Vin and R2.
250
Vin = 5V
200
150
100
50
0
0
3.3V
2.5V
2
46
R2 (K)
IL = 1A
Von/off = 3.3V
R1 = 20K
Ci = 10 µF
Co = 1µ F
8 10
Figure 9. % of Current Overshoot
Variation with Vin and R2.
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VOUT
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE W IDTH
Figure 11. Switching Waveforms.
FDC6323L Rev.F

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FDC6323 전자부품, 판매, 대치품
SuperSOTTM-6 Tape and Reel Data and Package Dimensions
SSOT-6 Packaging
Configuration: Figure 1.0
Customize Label
Antistatic Cover Tape
Conductive Embossed
Carrier Tape
F63TNR
Label
SSOT-6 Packaging Information
Packaging Option
Packaging type
Standard
(no flow code)
TNR
D87Z
TNR
Qty per Reel/Tube/Bag
3,000
10,000
Reel Size
7” Dia
13”
Box Dimension (mm) 184x187x47 343x343x64
Max qty per Box
9,000
20,000
Weight per unit (gm)
0.0158
0.0158
Weight per Reel (kg)
0.1440
0.4700
Note/Comments
F63TNR
Label
631 631
631 631
Pin 1
SSOT-6 Unit Orientation
343mm x 342mm x 64mm
Intermediate box for D87Z Option
F63TNR Label
184mm x 184mm x 47mm
Pizza Box for Standard Option
F63TNR
Label
SSOT-6 Tape Leader Trailer
Configuration: Figure 2.0
F63TNR Label sample
LOT: CBVK741B019
FSID: FDC633N
QTY: 3000
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
QARV:
(F63TNR)2
Carrier Tape
Cover Tape
Trailer Tape
160mm minimum
© 1998 Fairchild Semiconductor Corporation
Components
Leader Tape
390mm minimum
December 1998, Rev. B

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