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FDC6333C 데이터시트 PDF




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부품번호 FDC6333C 기능
기능 30V N & P-Channel PowerTrench MOSFETs
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FDC6333C 데이터시트, 핀배열, 회로
October 2001
FDC6333C
30V N & P-Channel PowerTrench® MOSFETs
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
Applications
DC/DC converter
Load switch
LCD display inverter
D2
S1
D1
Features
Q1 2.5 A, 30V.
RDS(ON) = 95 m@ VGS = 10 V
RDS(ON) = 150 m@ VGS = 4.5 V
Q2 –2.0 A, 30V.
RDS(ON) = 150 m@ VGS = –10 V
RDS(ON) = 220 m@ VGS = –4.5 V
Low gate charge
High performance trench technology for extremely
low RDS(ON).
SuperSOT –6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick).
Q2(P)
43
SuperSOT TM-6
Pin 1
G2
S2
G1
SuperSOT™-6
52
61
Q1(N)
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.333
FDC6333C
7’’
Q1 Q2
30 –30
±16 ±25
2.5 –2.0
8 –8
0.96
0.9
0.7
–55 to +150
Units
V
V
A
W
°C
130 °C/W
60 °C/W
Tape width
8mm
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDC6333C Rev C (W)




FDC6333C pdf, 반도체, 판매, 대치품
Typical Characteristics: N-Channel
10
VGS = 10V
6.0V
8
4.5V
3.5V
6
3.0V
4
2
0
0123
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = 2.5A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
10
VDS =5V
8
6
TA =-55oC
25oC
125oC
4
2
0
1.5
2 2.5 3 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics.
2
VGS = 3.0V
1.8
1.6
3.5V
1.4
4.0V
4.5V
1.2
6.0V
10V
1
0.8
0
2468
ID, DRAIN CURRENT (A)
10
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.25
0.2
ID = 1.25A
0.15
TA = 125oC
0.1
TA = 25oC
0.05
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
TA = 125oC
1
0.1
0.01
25oC
-55oC
0.001
0.0001
0.2
0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6333C Rev C (W)

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FDC6333C 전자부품, 판매, 대치품
Typical Characteristics: P-Channel (continued)
10
ID = -2.0A
8
6
4
2
0
01
VDS = -5V
-10V
-15V
23
Qg, GATE CHARGE (nC)
4
5
Figure 17. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
0.1 RθJA = 180oC/W
TA = 25oC
10µs
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 19. Maximum Safe Operating Area.
300
250
200
CISS
f = 1MHz
VGS = 0 V
150
100
COSS
50
CRSS
0
0
5 10 15 20 25
-VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 18. Capacitance Characteristics.
5
4
3
2
1
0
0.01
0.1
SINGLE PULSE
RθJA = 180°C/W
TA = 25°C
1 10
t1, TIME (sec)
100 1000
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 180°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
10
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100
1000
FDC6333C Rev C (W)

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FDC6333C

30V N & P-Channel PowerTrench MOSFETs

Fairchild Semiconductor
Fairchild Semiconductor

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