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PDF FDC6392S Data sheet ( Hoja de datos )
| Número de pieza | FDC6392S | |
| Descripción | 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode | |
| Fabricantes | Fairchild Semiconductor | |
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April 2002
FDC6392S
20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode
General Description
The FDC6392S combines the exceptional performance
of Fairchild's PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in an SSOT-6 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
MOSFET:
• –2.2 A, –20V. RDS(ON) = 150 mΩ @ VGS = –4.5V
RDS(ON) = 200 mΩ @ VGS = –2.5V
• Low Gate Charge (3.7nC typ)
• Compact industry standard SuperSOT-6 package
Schottky:
• VF < 0.45 V @ 1 A
D2
S1
D1
SuperSOT TM-6
Pin 1
G2
S2
G1
SuperSOT™-6
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
VRRM
IO
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.392
FDC6392S
7’’
1
2
3
Ratings
–20
±12
–2.2
–6
0.96
0.9
0.7
–55 to +150
20
1
130
60
Tape width
8mm
6
5
4
Units
V
V
A
W
°C
V
A
°C/W
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDC6392S Rev C(W)
1 page  
Typical Characteristics
5
ID = -2.2A
4
3
VDS = -5V
-10V
-15V
2
1
0
012345
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1
TJ = 125oC
0.1
0.01
TJ = 25oC
0.001
0
0.1 0.2 0.3
VF, FORWARD VOLTAGE (V)
0.4
0.5
Figure 9. Schottky Diode Forward Voltage.
600
500
400
300
200
100
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
1.E-01
1.E-02
TJ = 125oC
1.E-03
1.E-04
TJ = 25oC
1.E-05
0
5 10 15
VR, REVERSE VOLTAGE (V)
20
Figure 10. Schottky Diode Reverse Current.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 180 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100
1000
FDC6392S Rev C(W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDC6392S.PDF ] | |
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