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부품번호 | FDC6401N 기능 |
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기능 | Dual N-Channel 2.5V Specified PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
October 2001
FDC6401N
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This Dual N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
• Battery Protection
• Power Management
Features
• 3.0 A, 20 V.
RDS(ON) = 70 mΩ @ VGS = 4.5 V
RDS(ON) = 95 mΩ @ VGS = 2.5 V
• Low gate charge (3.3 nC)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D2
S1
D1
SuperSOT TM -6
G2
S2
G1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.401
FDC6401N
7’’
4
5
6
Ratings
20
±12
3.0
12
0.96
0.9
0.7
–55 to +150
130
60
Tape width
8mm
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDC6401N Rev C (W)
Typical Characteristics
5
ID = 3A
4
3
VDS = 5V
10V
15V
2
1
0
01234
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 4.5V
0.1
SINGLE PULSE
RθJA = 180oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
450
360
CISS
270
f = 1 MHz
VGS = 0 V
180
COSS
90
CRSS
0
0
5 10 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
10
8
6
4
2
0
0.01
0.1
SINGLE PULSE
RθJA = 180°C/W
TA = 25°C
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 180°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDC6401N Rev C (W)
4페이지 | |||
구 성 | 총 5 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDC6401N | Dual N-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |