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부품번호 | FDC642 기능 |
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기능 | P-Channel 2.5V Specified PowerTrenchMOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
July 1999
FDC642P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the larger packages are impractical.
Applications
Load switch
Battery protection
Power management
Features
-4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V
RDS(ON) = 0.100 Ω @ VGS = -2.5 V
Fast switching speed.
Low gate charge (7.2nC typical).
High performance trench technology for extremely
low RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
S
D
D
SuperSOT TM-6
G
D
D
16
25
34
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Power Dissipation for Single Operation
(Note 1)
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Ratings
-20
±8
-4
-20
1.6
0.8
-55 to +150
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.642
FDC642P
7’’
78
30
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDC642P, Rev. B
Typical Characteristics (continued)
5
ID = -4A
4
3
2
1
0
02
VDS = -5V
-10V
-15V
46
Qg, GATE CHARGE (nC)
8
10
Figure 7. Gate-Charge Characteristics
1250
1000
750
500
250
0
0
f = 1 MHz
VGS = 0 V
CISS
COSS
CRSS
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics
100
10 RDS(ON) LIMIT
1
VGS= -4.5V
SINGLE PULSE
0.1 RθJA= 156oC/W
TA= 25oC
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area
5
SINGLE PULSE
RθJA = 156oC/W
4 TA = 25oC
3
2
1
0
0.1
1 10 100
SINGLE PULSE TIME (SEC)
1000
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.5 D = 0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.005
0.00001
0.0001
0.001
0.01
0.1
t1 , TIME (sec)
R θJA (t) = r(t) * R θJA
R θJA = 156°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1/ t 2
1 10 100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDC642P, Rev. B
4페이지 SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SuperSOT™-6 (FS PKG Code 31, 33)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0158
© 1998 Fairchild Semiconductor Corporation
September 1998, Rev. A
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDC6401N | Dual N-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
FDC640P | P-Channel 2.5V Specified PowerTrenchTM MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |