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부품번호 | FDD6030 기능 |
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기능 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
FDD6030BL
N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-
state resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Motor drives
April 1999
ADVANCE INFORMATION
Features
• 35 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V
RDS(ON) = 0.025 Ω @ VGS = 4.5 V.
• Low gate charge.
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON).
D
D
G
S
TO-252
Absolute Maximum Ratings TC=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current -Continuous
(Note 1)
(Note 1a)
Maximum Drain Current -Pulsed
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
TA = 25oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1b)
G
S
Ratings
30
±20
35
9
100
44
2.8
1.3
-55 to +150
2.8
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6030BL
FDD6030BL
13’’
Tape width
16mm
©1999 Fairchild Semiconductor Corporation
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500
FDD6030BL Rev. A
D-PAK (TO-252) Embossed Carrier
Tape Configuration: Figure 3.0
T
P0
D0
K0
Wc
B0
Tc
A0 P1 D1
User Direction of Feed
E1
F
E2
W
Dimensions are in millimeter
Pkg type
A0
B0
W
D0
D1
E1
E2
F
P1 P0
TO252
(24mm)
6.90
+/-0.10
10.50
+/-0.10
16.0
+/-0.3
1.55
+/-0.05
1.5
+/-0.10
1.75
+/-0.10
14.25
min
7.50
+/-0.10
8.0
+/-0.1
4.0
+/-0.1
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum
Typical
component
cavity
B0 center line
10 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
D-PAK (TO-252) Reel
Configuration: Figure 4.0
Typical
component
A0 center line
Sketch B (Top View)
Component Rotation
W1 Measured at Hub
K0 T
2.65
+/-0.10
0.30
+/-0.05
Wc
13.0
+/-0.3
Tc
0.06
+/-0.02
0.9mm
maximum
0.9mm
maximum
Sketch C (Top View)
Component lateral movement
Dim A
max
Dim N
Dim A
Max
Dim D
min
B Min
Dim C
See detail AA
W3
13” Diameter Option
W2 max Measured at Hub
DETAIL AA
Tape Size
Reel
Option
164mm
13” Dia
Dimensions are in inches and millimeters
Dim A Dim B
Dim C
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
Dim N
4.00
100
Dim W1
0.646 +0.078/-0.000
16.4 +2/0
Dim W2
0.882
22.4
Dim W3 (LSL-USL)
0.626 – 0.764
15.9 – 19.4
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FDD6030 | N-Channel PowerTrenchTM MOSFET | Fairchild Semiconductor |
FDD6030 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |