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부품번호 | FDD6612A 기능 |
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기능 | 30V N-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
February 2004
FDD6612A/FDU6612A
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
• DC/DC converter
• Motor Drives
Features
• 30 A, 30 V
RDS(ON) = 20 mΩ @ VGS = 10 V
RDS(ON) = 28 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
@TA=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
PD
TJ, TSTG
Power Dissipation
@TC=25°C
(Note 1)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
±20
30
9.5
60
36
2.8
1.3
–55 to +175
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6612A
FDD6612A
D-PAK (TO-252)
FDU6612A
FDU6612A
I-PAK (TO-251)
Reel Size
13’’
Tube
3.9
45
96
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
75
©2004 Fairchild Semiconductor Corporation
FDD6612A/FDU6612A Rev E(W)
Typical Characteristics
60
VGS = 10V
50
6.0V
40
30
5.0V
4.5V
4.0V
20 3.5V
10
0
0
3.0V
123
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
Figure 1. On-Region Characteristics
1.8
ID = 9.5A
1.6 VGS = 10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature
60
VDS = 5V
50
40
30
20
10
0
1.5
TA = 125oC
25oC
-55oC
2 2.5 3 3.5 4 4.5 5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5.5
2
VGS = 3.5V
1.8
1.6
4.0V
1.4
4.5V
5.0V
1.2
6.0V
1 10V
0.8
0
10 20 30
ID, DRAIN CURRENT (A)
40
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.06
0.05
ID = 5 A
0.04
0.03
TA = 125oC
0.02
0.01
2
TA = 25oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
100
VGS = 0V
10
1 TA = 125oC
0.1
0.01
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6612A/FDU6612A Rev. E(W)
4페이지 | |||
구 성 | 총 6 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDD6612 | N-Channel/ Logic Level/ PowerTrench MOSFET | Fairchild Semiconductor |
FDD6612A | N-Channel/ Logic Level/ PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |