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부품번호 | FDD6680 기능 |
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기능 | N-Channel Logic Level PWM Optimized PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
November 2004
FDD6680 / FDU6680
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Motor Drives
Features
• 46 A, 30 V
RDS(ON) = 10 mΩ @ VGS = 10 V
RDS(ON) = 15 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching Speed
• High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
±20
46
12
100
56
3.3
1.5
–55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA
(Note 1)
(Note 1a)
(Note 1b)
2.7
45
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6680
FDD6680
D-PAK (TO-252)
FDU6680
FDU6680
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
75
©2004 Fairchild Semiconductor Corporation
FDD6680/FDU6680 Rev. C1(W)
Typical Characteristics
100
VGS = 10.0V
6.0V
80
4.5V
5.0V
4.0V
60
3.5V
40
20 3.0V
0
0 0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
3
1.6
ID = 12A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature
1.8
VGS = 3.5V
1.6
1.4 4.0V
4.5V
5.0V
1.2
6.0V
10.0V
1
0.8
0
20 40 60
ID, DRAIN CURRENT (A)
80
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.03
0.025
ID = 6A
0.02
0.015
0.01
TA = 25oC
TA = 125oC
0.005
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
90
VDS = 5V
75
60
45
TA =-55oC
125oC
25oC
30
15
0
1.5
2 2.5 3 3.5 4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
4.5
1000
100
VGS = 0V
10
TA = 125oC
1
0.1
25oC
-55oC
0.01
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6680/FDU6680 Rev. C1(W)
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부품번호 | 상세설명 및 기능 | 제조사 |
FDD6680 | N-Channel Logic Level PWM Optimized PowerTrench MOSFET | Fairchild Semiconductor |
FDD6680 | 30V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |