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Número de pieza | FDD6680S | |
Descripción | 30V N-Channel PowerTrench SyncFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! December 2000
FDD6680S
30V N-Channel PowerTrench SyncFET™
General Description
The FDD6680S is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDD6680S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDD6680S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDD6680A in parallel with a Schottky diode.
Applications
• DC/DC converter
• Motor Drives
Features
• 55 A, 30 V
RDS(ON) = 11 mΩ @ VGS = 10 V
RDS(ON) = 17 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (17nC typical)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
.
D
G
S
TO-252
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6680S
FDD6680S
13’’
2001 Fairchild Semiconductor Corporation
D
G
S
Ratings
30
±20
55
100
60
3.1
1.3
–55 to +150
2.1
40
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
FDD6680S Rev D(W)
1 page Typical Characteristics (continued)
10
ID =12.5A
8
6
4
VDS = 5V
10V
15V
2
0
0 10 20 30 40
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT
1
VGS = 10V
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
1ms
10ms
100ms
1s
10s
100µs
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
3000
2500
2000
1500
1000
500
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
10 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
60
50
40
30
20
10
0
0.01
0.1
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6680S Rev D (W)
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDD6680S.PDF ] |
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