FDD6690A Datasheet PDF - Fairchild Semiconductor
| Part Number | FDD6690A | |
| Description | 30V N-Channel PowerTrench MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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July 2003
FDD6690A
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Motor Drives
Features
• 46 A, 30 V
RDS(ON) = 12 mΩ @ VGS = 10 V
RDS(ON) = 14 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching Speed
• High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30
±20
46
12
100
56
3.3
1.5
–55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
RθJA
(Note 1)
(Note 1a)
(Note 1b)
2.7
45
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6690A
FDD6690A
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2003 Fairchild Semiconductor Corp.
FDD6690A Rev EW)
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Typical Characteristics
10
ID = 12 A
8
6
VDS = 10V
15V
20V
4
2
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
1000
100 RDS(ON) LIMIT
10
1
VGS = 4.5V
SINGLE PULSE
0.1 RθJA = 96oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area
1800
1500
1200
Ciss
f = 1MHz
VGS = 0 V
900
600
300
Crss
0
0
Coss
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics
100
SINGLE PULSE
80
RθJA = 96°C/W
TA = 25°C
60
40
20
0
0.01
0.1 1 10
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation
100
1
0.1
0.01
0.001
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.0001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
10
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
100
1000
FDD6690A Rev. EW)
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| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FDD6690A.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| FDD6690 | The function is N-Channel/ Logic Level/ PowerTrenchTM MOSFET. Fairchild Semiconductor | |
| FDD6690A | The function is N-Channel/ Logic Level/ PowerTrenchTM MOSFET. Fairchild Semiconductor | |
| FDD6690A | The function is 30V N-Channel PowerTrench MOSFET. Fairchild Semiconductor | |
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