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PDF FDD8896 Data sheet ( Hoja de datos )
| Número de pieza | FDD8896 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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March 2015
FDD8896 / FDU8896
N-Channel PowerTrench® MOSFET
30V, 94A, 5.7mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A
• rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low
rDS(ON)
• Low gate charge
• High power and current handling capability
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
D
G
S
Ratings
30
±20
94
85
17
Figure 4
168
80
0.53
-55 to 175
1.88
100
52
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. 1.2
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
1.2 1.2
VGS = VDS, ID = 250µA
ID = 250µA
1.0
1.1
0.8
1.0
0.6
0.4
-80
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
5000
CISS = CGS + CGD
10
VDD = 15V
8
1000
CRSS = CGD
COSS ≅ CDS + CGD
6
4
VGS = 0V, f = 1MHz
100
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 13. Capacitance vs Drain to Source
Voltage
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 35A
ID = 5A
0
0 10 20 30 40 50
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2008 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. 1.2
5 Page 
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet FDD8896.PDF ] | |
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