Datasheet.kr   

FDG314P 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FDG314P은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 FDG314P 자료 제공

부품번호 FDG314P 기능
기능 Digital FET/ P-Channel
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


FDG314P 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 5 페이지수

미리보기를 사용할 수 없습니다

FDG314P 데이터시트, 핀배열, 회로
July 2000
FDG314P
Digital FET, P-Channel
General Description
This P-Channel enhancement mode field effect
transistor is produced using Fairchild Semiconductor’s
proprietary, high cell density, DMOS technology. This
very high density process is tailored to minimize on-
state resistance at low gate drive conditions. This
device is designed especially for battery power
applications such as notebook computers and cellular
phones. This device has excellent on-state resistance
even at gate drive voltages as low as 2.5 volts.
Applications
Power Management
Load switch
Signal switch
Features
-0.65 A, -25 V. RDS(ON) = 1.1 @ VGS = -4.5 V
RDS(ON) = 1.5 @ VGS = -2.7 V.
Very low gate drive requirements allowing direct
operation in 3V cirucuits (VGS(th) <1.5 V).
Gate-Source Zener for ESD ruggedness
(>6 kV Human Body Model).
Compact industry standard SC70-6 surface mount
package.
S
D
D
SC70-6
G
D
D
16
25
34
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
ESD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf/1500 Ohm)
Ratings
-25
±8
-0.65
-1.8
0.75
0.48
-55 to +150
6.0
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.14
FDG314P
7’’
260
Tape Width
8mm
Units
V
V
A
W
°C
kV
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor International
FDG314P Rev.C




FDG314P pdf, 반도체, 판매, 대치품
Typical Characteristics (continued)
5
ID = -0.5A
4
VDS = -5V
-10V
-15V
3
2
1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
10
1
0.1
0.01
0.1
RDS(ON) LIMIT
VGS = -4.5V
SINGLE PULSE
RθJA = 260oC/W
TA = 25oC
1ms
10ms
100ms
1s
10s
DC
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
150
f = 1MHz
VGS = 0 V
120
90
60 CISS
30
0
0
COSS
CRSS
5 10 15 20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
25
Figure 8. Capacitance Characteristics.
30
SINGLE PULSE
24
RθJA= 260oC/W
TA= 25oC
18
12
6
0
0.0001 0.001
0.01 0.1
1
10
SINGLE PULSE TIME (SEC)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5 D = 0.5
0.2
0.1
0.05
0.01
0.1
0.05
0.01
0.02
Single Pulse
0.005
0.0001
0.001
0.01
0.1
t1 , TIME (sec)
1
R θJA (t) = r(t) * R θJA
R θJA =260°C/W
P(pk)
t1
t2
TJ - TA = P * R θJA (t)
Duty Cycle, D = t 1/ t 2
10 100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDG314P Rev.C

4페이지












구       성 총 5 페이지수
다운로드[ FDG314P.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
FDG314P

Digital FET/ P-Channel

Fairchild Semiconductor
Fairchild Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵