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부품번호 | FDG326 기능 |
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기능 | P-Channel 1.8V Specified PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
January 2001
FDG326P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
Features
• –1.5 A, –20 V.
RDS(ON) = 140 mΩ @ VGS = –4.5 V
RDS(ON) = 180 mΩ @ VGS = –2.5 V
RDS(ON) = 250 mΩ @ VGS = –1.8 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Compact industry standard SC70-6 surface mount
package
SC70-6
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.26
FDG326P
7’’
16
25
34
Ratings
–20
±8
–1.5
–6
0.75
0.48
-55 to +150
260
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDG326P Rev D(W)
Typical Characteristics
5
ID = -1.5A
4
3
2
VDS = -5V
-15V
-10V
1
0
0123456
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10 RDS(ON) LIMIT
100µs
1ms
1
VGS = -4.5V
0.1 SINGLE PULSE
RθJA = 260oC/W
TA = 25oC
10ms
100ms
1s
DC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
700
600
500
400
300
200
100
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
30
SINGLE PULSE
RθJA = 260oC/W
24 TA = 25oC
18
12
6
0
0.0001
0.001
0.01 0.1
1
SINGLE PULSE TIME (SEC)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 260 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
100
1000
FDG326P Rev D(W)
4페이지 | |||
구 성 | 총 5 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDG326 | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |
FDG326P | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |