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부품번호 | FDG6317NZ 기능 |
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기능 | Dual 20v N-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
January 2004
FDG6317NZ
Dual 20v N-Channel PowerTrench® MOSFET
General Description
This dual N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
Applications
• DC/DC converter
• Power management
• Loadswitch
Features
• 0.7 A, 20 V.
RDS(ON) = 400 mΩ @ VGS = 4.5 V
RDS(ON) = 550 mΩ @ VGS = 2.5 V
• ESD protection diode (note 3)
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Compact industry standard SC70-6 surface mount
package
S
G
D
Pin 1
D
G
S
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.67
FDG6317NZ
7’’
©2004 Fairchild Semiconductor Corporation
Ratings
20
± 12
0.7
2.1
0.3
–55 to +150
415
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
FDG6317NZ Rev B (W)
Typical Characteristics
5
ID = 0.7A
4
3
VDS = 5V
15V
10V
2
1
0
0 0.2 0.4 0.6 0.8
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1
10
RDS(ON) LIMIT
1
0.1
100µs
1ms
10ms
100m
1s
DC
0.01
0.001
0.1
VGS = 10V
SINGLE PULSE
RθJA = 415oC/W
TA = 25oC
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
100
f = 1MHz
VGS = 0 V
75
Ciss
50
25
Crss
0
0
Coss
5 10 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
10
SINGLE PULSE
RθJA = 415°C/W
8 TA = 25°C
6
4
2
0
0.0001 0.001 0.01
0.1
1
10 100 1000
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t)*RθJA
RθJA = 415°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FDG6317NZ Rev B (W)
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부품번호 | 상세설명 및 기능 | 제조사 |
FDG6317NZ | Dual 20v N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |