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FDG6332C 데이터시트 PDF




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부품번호 FDG6332C 기능
기능 20V N & P-Channel PowerTrench MOSFETs
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FDG6332C 데이터시트, 핀배열, 회로
September 2003
FDG6332C
20V N & P-Channel PowerTrench® MOSFETs
General Description
The N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
TSSOP-8 and SSOP-6 packages are impractical.
Applications
DC/DC converter
Load switch
LCD display inverter
Features
Q1 0.7 A, 20V.
RDS(ON) = 300 m@ VGS = 4.5 V
RDS(ON) = 400 m@ VGS = 2.5 V
Q2 –0.6 A, –20V.
RDS(ON) = 420 m@ VGS = –4.5 V
RDS(ON) = 630 m@ VGS = –2.5 V
Low gate charge
High performance trench technology for extremely
low RDS(ON)
SC70-6 package: small footprint (51% smaller than
SSOT-6); low profile (1mm thick)
S
G
D
Pin 1
D
G
S
SC70-6
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
– Pulsed
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.32
FDG6332C
7’’
16
25
34
Complementary
Q1 Q2
20 –20
±12 ±12
0.7 –0.6
2.1 –2
0.3
–55 to +150
Units
V
V
A
W
°C
415 °C/W
Tape width
8mm
Quantity
3000 units
©2003 Fairchild Semiconductor Corporation
FDG6332C Rev C2 (W)




FDG6332C pdf, 반도체, 판매, 대치품
Typical Characteristics: N-Channel
4
VGS=4.5V
3.5V
3
3.0V
2.5V
2
2.0V
1
0
01234
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID =0.7A
VGS = 4.5V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
2.5
VDS = 5V
2
1.5
TA = -55oC
25oC
125oC
1
0.5
0
0.5
1 1.5 2 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3
Figure 5. Transfer Characteristics.
1.8
1.6
VGS = 2.5V
1.4
1.2
1
3.0V
3.5V
4.0V
4.5V
0.8
0
123
ID, DRAIN CURRENT (A)
4
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.6
TA = 125oC
0.4
TA = 25oC
0.2
ID =0.4A
0
12345
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG6332C Rev C2 (W)

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FDG6332C 전자부품, 판매, 대치품
Typical Characteristics: P-Channel
5
ID = -0.6A
4
3
2
1
0
0 0.3
VDS = -5V
-10V
-15V
0.6 0.9 1.2 1.5 1.8
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
10
RDS(ON) LIMIT
1
0.1 VGS = -4.5V
SINGLE PULSE
RθJA = 415oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 19. Maximum Safe Operating Area.
160
120
CISS
f = 1MHz
VGS = 0 V
80
COSS
40
CRSS
0
0
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 18. Capacitance Characteristics.
10
SINGLE PULSE
RθJA = 415oC/W
8 TA = 25oC
6
4
2
0
0.001
0.01
0.1 1
SINGLE PULSE TIME (SEC)
10
Figure 20. Single Pulse Maximum
Power Dissipation.
100
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 415 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
100
FDG6332C Rev C2 (W)

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FDG6332C

20V N & P-Channel PowerTrench MOSFETs

Fairchild Semiconductor
Fairchild Semiconductor

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