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부품번호 | FDG6335N 기능 |
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기능 | 20V N & P-Channel PowerTrench MOSFETs | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
October 2001
FDG6335N
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
Applications
• DC/DC converter
• Power management
• Loadswitch
Features
• 0.7 A, 20 V.
RDS(ON) = 300 mΩ @ VGS = 4.5 V
RDS(ON) = 400 mΩ @ VGS = 2.5 V
• Low gate charge (1.1 nC typical)
• High performance trench technology for extremely
low RDS(ON)
• Compact industry standard SC70-6 surface mount
package
S
G
D
S 1 or 4
Pin 1
D
G
S
G 2 or 5
D 3 or 6
SC70-6
Dual N-Channel
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
6 or 3 D
5 or 2 G
4 or 1 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.35
FDG6335N
7’’
Ratings
20
± 12
0.7
2.1
0.3
–55 to +150
415
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDG6335N Rev C (W)
Typical Characteristics
5
ID = 0.7A
4
3
VDS = 5V
10V
15V
2
1
0
0 0.4 0.8 1.2
Qg, GATE CHARGE (nC)
1.6
Figure 7. Gate Charge Characteristics.
10
RDS(ON) LIMIT
1
VGS = 4.5V
0.1 SINGLE PULSE
RθJA = 415oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
200
150
CISS
100
f = 1MHz
VGS = 0 V
COSS
50
CRSS
0
0
5 10 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
10
SINGLE PULSE
RθJA = 415°C/W
8 TA = 25°C
6
4
2
0
0.001
0.01
0.1 1
t1, TIME (sec)
10 100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 415 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
10
100
FDG6335N Rev C (W)
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FDG6335N | 20V N & P-Channel PowerTrench MOSFETs | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |