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PDF FDH038AN08A1 Data sheet ( Hoja de datos )
| Número de pieza | FDH038AN08A1 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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February 2003
FDH038AN08A1
N-Channel PowerTrench® MOSFET
75V, 80A, 3.8mΩ
Features
• rDS(ON) = 3.5mΩ (Typ.), VGS = 10V, ID = 80A
• Qg(tot) = 125nC (Typ.), VGS = 10V
• Internal Gate Resistor, Rg = 20Ω (Typ.)
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82690
SOURCE
DRAIN
GATE
Applications
• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems
D
G
TO-247
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 158oC, VGS = 10V)
Continuous (TA = 25oC, VGS = 10V, with RθJA = 30oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 1)
Power dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case TO-247
Thermal Resistance Junction to Ambient TO-247
S
Ratings
75
±20
80
22
Figure 4
1.17
450
3.0
-55 to 175
0.33
30
Units
V
V
A
A
A
J
W
W/oC
oC
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation
FDH038AN08A1 Rev A
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
1.4
VGS = VDS, ID = 250µA
1.2
1.0
0.8
0.6
0.4
0.2
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1.2
ID = 250µA
1.1
1.0
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
20000
10000
COSS ≅ CDS + CGD
CISS = CGS + CGD
10
VDD = 40V
8
6
1000
CRSS = CGD
4
VGS = 0V, f = 1MHz
100
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
75
Figure 13. Capacitance vs Drain to Source
Voltage
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 80A
ID = 40A
25 50 75
Qg, GATE CHARGE (nC)
100
125
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2003 Fairchild Semiconductor Corporation
FDH038AN08A1 Rev. A
5 Page | ||
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| PDF Descargar | [ Datasheet FDH038AN08A1.PDF ] | |
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