Datasheet.kr   

FDH047AN08A0 PDF 데이터시트 ( Data , Function )

부품번호 FDH047AN08A0 기능
기능 N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고 


이 페이지 하단에 미리보기 및 FDH047AN08A0 다운로드 (pdf 파일) 링크가 있습니다.




전체 10 페이지

No Preview Available !

FDH047AN08A0 데이터시트, 핀배열, 회로
June 2004
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
N-Channel PowerTrench® MOSFET
75V, 80A, 4.7m
Features
• rDS(ON) = 4.0m(Typ.), VGS = 10V, ID = 80A
• Qg(tot) = 92nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82684
Applications
• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
TO-220AB
FDP SERIES
DRAIN TO-262AB
(FLANGE) FDI SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 144oC, VGS = 10V)
Continuous (TC = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 1)
Power dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220, TO-262, TO-247
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
Thermal Resistance Junction to Ambient TO-247 (Note 2)
SOURCE
DRAIN
GATE
DRAIN G
(FLANGE)
TO-247
FDH SERIES
Ratings
75
±20
80
15
Figure 4
475
310
2.0
-55 to 175
0.48
62
30
D
S
Units
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2004 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C




FDH047AN08A0 pdf, 반도체, 판매, 대치품
Typical Characteristics TC = 25°C unless otherwise noted
2000
1000
100
10µs
100µs
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10ms
DC
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
0.1
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 5. Forward Bias Safe Operating Area
500
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
.01
0.1 1 10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
120 VDD = 15V
90
TJ = 175oC
60
TJ = 25oC
30
TJ = -55oC
0
4.0 4.5 5.0 5.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
6.0
150
VGS = 10V
120
90
VGS = 7V
VGS = 6V
60
30
0
0
VGS = 5V
TC = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.5 1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.5
Figure 8. Saturation Characteristics
7
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
6
VGS = 6V
5
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
4
VGS = 10V
3
0
20 40 60
ID, DRAIN CURRENT (A)
80
Figure 9. Drain to Source On Resistance vs Drain
Current
1.0
0.5
-80
VGS = 10V, ID = 80A
-40 0
40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2004 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C

4페이지










FDH047AN08A0 전자부품, 판매, 대치품
PSPICE Electrical Model
.SUBCKT FDP047AN08A0 2 1 3 ; rev March 2002
CA 12 8 1.5e-9
CB 15 14 1.5e-9
CIN 6 8 6.4e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 82.3
DPLCAP 5
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.81e-9
LSOURCE 3 7 4.63e-9
GATE
1
LGATE
RLGATE
-
ESG
6
8
+
EVTEMP
RGATE + 18 -
9 20 22
6
EVTHRES
+ 19 -
8
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
MMED
MSTRO
CIN
8
7
DBODY
LSOURCE
SOURCE
3
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
S1A
12 13
8
S2A
14 15
13
RSOURCE
RLSOURCE
RBREAK
17 18
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 9e-4
RGATE 9 20 1.36
RLDRAIN 2 5 10
RLGATE 1 9 48.1
RLSOURCE 3 7 46.3
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 2.3e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1B
S2B
CA 13 CB
+ + 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT -
VBAT
+
8
22
RVTHRES
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*250),10))}
.MODEL DBODYMOD D (IS = 2.4e-11 N = 1.04 RS = 1.76e-3 TRS1 = 2.7e-3 TRS2 = 2e-7 XTI=3.9 CJO = 4.35e-9 TT = 1e-8
M = 5.4e-1)
.MODEL DBREAKMOD D (RS = 1.5e-1 TRS1 = 1e-3 TRS2 = -8.9e-6)
.MODEL DPLCAPMOD D (CJO = 1.35e-9 IS = 1e-30 N = 10 M = 0.53)
.MODEL MMEDMOD NMOS (VTO = 3.7 KP = 9 IS =1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.36)
.MODEL MSTROMOD NMOS (VTO = 4.4 KP = 250 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 3.05 KP = 0.03 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.36e1 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.05e-3 TC2 = -9e-7)
.MODEL RDRAINMOD RES (TC1 = 1.9e-2 TC2 = 4e-5)
.MODEL RSLCMOD RES (TC1 = 1.3e-3 TC2 = 1e-5)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -6e-3 TC2 = -1.9e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.4e-3 TC2 = 1e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.0 VOFF= -1.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF= -4.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.0 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.0)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2004 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C

7페이지


구       성총 10 페이지
다운로드[ FDH047AN08A0.PDF 데이터시트 ]


 
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

상호 : 아이지 인터내셔날

사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ]


 

관련 데이터시트

부품번호상세설명 및 기능제조사
FDH047AN08A0

N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m

Fairchild Semiconductor
Fairchild Semiconductor

DataSheet.kr    |   2020   |  연락처   |  링크모음   |   검색  |   사이트맵