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부품번호 | FDN302 기능 |
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기능 | P-Channel 2.5V Specified PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
October 2000
FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –20 V, –2.4 A. RDS(ON) = 0.055 Ω @ VGS = –4.5 V
RDS(ON) = 0.080 Ω @ VGS = –2.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
D
D
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
302
FDN302P
7’’
GS
Ratings
–20
±12
–2.4
–10
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDN302P Rev C(W)
Typical Characteristics
5
ID = -2.4A
4
3
2
1
0
02
VDS = -5V
-10V
-15V
46
Qg, GATE CHARGE (nC)
8
10
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS =-4.5V
0.1
SINGLE PULSE
RθJA = 270oC/W
TA = 25oC
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1400
1200
1000
800
600
400
200
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
2 4 6 8 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
12
Figure 8. Capacitance Characteristics.
20
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
15
10
5
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 270 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDN302P Rev C(W)
4페이지 | |||
구 성 | 총 5 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDN302 | P-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
FDN302P | P-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |