|
|
|
부품번호 | FDN360P 기능 |
|
|
기능 | Single P-Channel PowerTrenchTM MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
February 1999
FDN360P
Single P-Channel PowerTrenchTM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• DC/DC converter
• Load switch
• Motor drives
Features
• -2 A, -30 V. RDS(on) = 0.080 Ω @ VGS = -10 V
RDS(on) = 0.125 Ω @ VGS = -4.5 V.
• Low gate charge (5nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON).
• High power and current handling capability.
DD
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
360
FDN360P
7’’
GS
Ratings
-30
±20
-2
-20
0.5
0.46
-55 to +150
Units
V
V
A
W
°C
250 °C/W
75 °C/W
Tape Width
8mm
Quantity
3000 units
©1999 Fairchild Semiconductor Corporation
FDN360P Rev. D
Typical Characteristics (continued)
10
ID= -2.0A
8
6
4
2
0
02
VDS= -5.0V
-10V
-15V
46
Qg, GATE CHARGE (nC)
8
10
Figure 7. Gate Charge Characteristics.
600
480
360
240
120
0
0
f=1MHz
VGS= 0V
Ciss
Coss
Crss
6 12 18 24
-VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
100
10 RDS(ON) Limit
100µs
1
0.1
0.01
VGS= -10V
SINGLE PULSE
RθJC=270oC/W
TA=25oC
0.1
1
1ms
10ms
100ms
1s
10s
DC
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
50
SINGLE PULSE
40
RθJA=270oC/W
TA=25oC
30
20
10
0
0.0001 0.001
0.01 0.1 1 10
SINGLE PULSE TIME (SEC)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
t1 , TIME (sec)
1
R θJA (t) = r(t) * RθJA
RθJA = 270 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1 /t2
10 100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDN360P Rev. D
4페이지 SuperSOTTM-3 Tape and Reel Data and Package Dimensions, continued
SuperSOT™-3 (FS PKG Code 32)
1:1
Scale 1:1 on letter size paper
Di mensions shown below are in:
inches [mil limeters]
Part Weight per unit (gram): 0.0097
September 1998, Rev. A
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ FDN360P.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FDN360 | Single P-Channel PowerTrenchTM MOSFET | Fairchild Semiconductor |
FDN360P | Single P-Channel PowerTrenchTM MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |