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부품번호 | FDN5630 기능 |
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기능 | 60V N-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
March 2000
FDN5630
60V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
This MOSFET features very low RDS(ON) in a small SOT23
footprint. Fairchild’s PowerTrench technology provides
faster switching than other MOSFETs with comparable
RDS(ON) specifications. The result is higher overall
efficiency with less board space.
Applications
• DC/DC converter
• Motor drives
• 1.7 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V
RDS(ON) = 0.120 Ω @ VGS = 6 V.
• Optimized for use in high frequency DC/DC converters.
• Low gate charge.
• Very fast switching.
• SuperSOTTM - 3 provides low RDS(ON) in SOT23 footprint.
DD
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA = 25 C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
5630
FDN5630
7
GS
Ratings
60
±20
1.7
10
0.5
0.46
-55 to +150
250
75
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDN5630 Rev. C
Typical Characteristics (continued)
10
ID = 1.7A
8
6
VDS = 10V
20V
30V
4
2
0
02468
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
600
500
400 CISS
f = 1MHz
VGS = 0 V
300
200
100
0
0
COSS
CRSS
10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 8. Capacitance Characteristics.
10
RDS(ON) LIMIT
1
0.1 VGS = 10V
SINGLE PULSE
RθJA = 270oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
20
SINGLE PULSE
16 RθJA=270oC/W
TA=25oC
12
8
4
0
0.0001 0.001
0.01 0.1 1 10
SINGLE PULSE TIME (SEC)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
t1 , TIME (sec)
1
R θJA (t) = r(t) * RθJA
RθJA = 270 C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1 /t2
10 100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDN5630 Rev. C
4페이지 SuperSOTTM-3 Tape and Reel Data and Package Dimensions, continued
SuperSOT™-3 (FS PKG Code 32)
1:1
Scale 1:1 on letter size paper
Di mensions shown below are in:
inches [mil limeters]
Part Weight per unit (gram): 0.0097
September 1998, Rev. A
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDN5630 | 60V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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