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부품번호 | FDS2170N7 기능 |
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기능 | 200V N-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
May 2003
FDS2170N7
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 3.0 A, 200 V. RDS(ON) = 128 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching, low gate charge (26nC typical)
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS2170N7
FDS2170N7
13’’
Ratings
200
± 20
3.0
20
3.0
1.8
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2003 Fairchild Semiconductor Corporation
FDS2170N7 Rev C3(W)
Typical Characteristics
30
25
20
15
10
5
0
0
VGS = 10V
7.0V
6.5V
6.0V
2 4 6 8 10 12
VDS, DRAIN-SOURCE VOLTAGE (V)
14
Figure 1. On-Region Characteristics.
2.6
ID = 3.0A
2.2 VGS = 10V
1.8
1.4
1
0.6
0.2
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
60
VDS = 20V
50
40
TA = -55oC
25oC
125oC
30
20
10
0
345678
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.6
VGS = 5.5V
1.4
1.2
6.0V
6.5V
10V
1
0.8
0
5 10 15
ID, DRAIN CURRENT (A)
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.35
0.3
0.25
0.2
0.15
0.1
0.05
4
TA = 125oC
ID = 1.5 A
TA = 25oC
56789
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS2170N7 Rev C3(W)
4페이지 | |||
구 성 | 총 6 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS2170N3 | 200V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |