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부품번호 | FDS3590 기능 |
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기능 | 80V N-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
January 2000
PRELIMINARY
FDS3590
80V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 6.5 A, 80 V
RDS(ON) = 0.037 Ω @ VGS = 10 V
RDS(ON) = 0.043 Ω @ VGS = 6 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
D
D
D
G
SS
SO-8 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature
Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS3590
FDS3590
13’’
1999 Fairchild Semiconductor Corporation
5
6
7
8
Ratings
80
±20
6.5
50
2.5
1.2
1.0
-55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS3590 Rev B. (W)
Typical Characteristics
10
ID= 6.5A
8
6
4
2
0
06
VDS= 10V
40V
20V
12 18
Qg, GATE CHARGE (nC)
24
30
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
0.1
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
2000
1500
1000
CISS
f = 1MHz
VGS= 0 V
500
0
0
CRSS
COSS
20 40 60
VDS, DRAIN TO SOURCE VOLTAGE (V)
80
Figure 8. Capacitance Characteristics.
30
25
20
15
10
5
0
0.01
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
0.1 1 10
t, SINGLE PULSE TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
RqϑΑ(t) = r(t) + RqϑΑ
RqϑΑ = 125 °C/W
P(pk)
t1
t2
Tϑ - TΑ = P * RqϑΑ(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS3590 Rev B. (W)
4페이지 SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS3590 | 80V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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