|
|
|
부품번호 | FDS4465 기능 |
|
|
기능 | P-Channel 1.8V Specified PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
March 2003
FDS4465
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –13.5 A, –20 V.
RDS(ON) = 8.5 mΩ @ VGS = –4.5 V
RDS(ON) = 10.5 mΩ @ VGS = –2.5 V
RDS(ON) = 14 mΩ @ VGS = –1.8 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High current and power handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 SS SS SS GG
54
63
72
81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4465
FDS4465
13’’
Ratings
–20
±8
–13.5
–50
2.5
1.5
1.2
–55 to +175
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
2003 Fairchild Semiconductor Corporation
FDS4465 Rev C1 (W)
Typical Characteristics
5
ID = -13.5A
4
3
2
1
0
0 20
VDS = -5V
-10V
-15V
40 60
Qg, GATE CHARGE (nC)
80
100
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = -4.5V
0.1
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
10000
CISS
f = 1 MHz
VGS = 0 V
8000
6000
4000
2000
0
0
COSS
CRSS
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
0.1 1
t1, TIME (sec)
10 100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 125oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4465 Rev C1 (W)
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ FDS4465.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FDS4465 | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |
FDS4465_F085 | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |