|
|
Número de pieza | FDS4480 | |
Descripción | 40V N-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDS4480 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! February 2002
FDS4480
40V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 10.8 A, 40 V. RDS(ON) = 12 mΩ @ VGS = 10 V
• Low gate charge (29 nC)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 SSSS SS GG
54
63
72
81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4480
FDS4480
13’’
Ratings
40
+30/–20
10.8
45
2.5
1.4
1.2
–55 to +175
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDS4480 Rev D (W)
1 page Typical Characteristics
10
ID = 10.8A
8
6
VDS = 10V
20V
30V
4
2
0
0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
35
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
0.1 RθJA = 125oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
2400
2000
1600
CISS
f = 1 MHz
VGS = 0 V
1200
800
COSS
400
CRSS
0
0 10 20 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
40
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
0.1 1
10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 125oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4480 Rev D (W)
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FDS4480.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDS4480 | 40V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS4488 | 30V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |