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부품번호 | FDS4935A 기능 |
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기능 | Dual 30V P-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
March 2002
FDS4935A
Dual 30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 20V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –7 A, –30 V
RDS(ON) = 23 mΩ @ VGS = –10 V
RDS(ON) = 35 mΩ @ VGS = –4.5 V
• Low gate charge (15nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD1DD1
DD2
DD2
SO-8
Pin 1 SO-8
SS2GS2SS1GG1
5
6 Q1
7
Q2
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4935A
FDS4935A
13’’
Ratings
–30
±20
–7
–30
2
1.6
1
0.9
–55 to +175
78
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2002 Fairchild Semiconductor Corporation
FDS4935A Rev A(W)
Typical Characteristics
10
ID = -8.8A
8
6
4
2
0
04
VDS = -5V
-15V
-10V
8 12 16 20 24
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = -10V
0.1
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100µs
100
Figure 9. Maximum Safe Operating Area.
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
CISS
f = 1 MHz
VGS = 0 V
COSS
CRSS
5 10 15 20 25
-VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 135°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
t1, TIME (sec)
10 100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 135 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4935A Rev A(W)
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS4935 | Dual 30V P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS4935A | Dual 30V P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |