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부품번호 | FDS5690 기능 |
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기능 | 60V N-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
March 2000
FDS5690
60V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• DC/DC converter
• Motor drives
Features
• 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V
RDS(on) = 0.033 Ω @ VGS = 6 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON).
• High power and current handling capability.
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
5
6
7
8
Ratings
60
±20
7
50
2.5
1.2
1
-55 to +150
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS5690
FDS5690
13’’
Tape Width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDS5690 Rev. C
Typical Characteristics (continued)
10
ID = 7A
8
6
VDS = 10V
20V
30V
4
2
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1600
1200
800
CISS
f = 1MHz
VGS = 0 V
400
0
0
COSS
CRSS
10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 8. Capacitance Characteristics.
100
RDS(ON) LIMIT
10
100µs
1ms
10ms
1
0.1
0.01
0.1
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
1
100ms
1s
10s
DC
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
50
SINGLE PULSE
40 RθJA=125oC/W
TA=25oC
30
20
10
0
0.001
0.01
0.1
1
10 100 1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
R θJA (t) = r(t) * R θJA
R θJA = 125°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1 /t2
10 100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS5690 Rev. C
4페이지 SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS5690 | 60V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS5692Z | N-Channel UltraFET Trench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |