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Número de pieza | FDS6162N3 | |
Descripción | 20V N-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDS6162N3 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! May 2003
FDS6162N3
20V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 21 A, 20 V
RDS(ON) = 4.5 mΩ @ VGS = 4.5 V
RDS(ON) = 6.0 mΩ @ VGS = 2.5 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6162N3
FDS6162N3
13’’
2002 Fairchild Semiconductor Corporation
Ratings
20
± 12
21
60
3.0
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
FDS6162N3 Rev B2 (W)
1 page Dimensional Outline and Pad Layout
FDS6162N3 Rev B2 (W)
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FDS6162N3.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDS6162N3 | 20V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS6162N7 | 20V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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