Datasheet.kr   

FDS6375 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FDS6375은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 FDS6375 자료 제공

부품번호 FDS6375 기능
기능 Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


FDS6375 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 8 페이지수

미리보기를 사용할 수 없습니다

FDS6375 데이터시트, 핀배열, 회로
February 1999
FDS6375
Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
DC/DC converter
Load switch
Battery Protection
Features
-8.0 A, -20 V. RDS(on) = 0.024 @ VGS = -4.5 V
RDS(on) = 0.032 @ VGS = -2.5 V.
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
D
D
D
D
54
63
SO-8
G
SS
S
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Ratings
-20
±8
-8.0
-50
2.5
1.2
1
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS6375
FDS6375
13’’
Tape Width
12mm
Quantity
2500 units
©1999 Fairchild Semiconductor Corporation
FDS6375 Rev. C




FDS6375 pdf, 반도체, 판매, 대치품
Typical Characteristics (continued)
5
ID= -8.0A
4
3
2
1
0
05
VDS= -5V
-10V
-15V
10 15
Qg, GATE CHARGE (nC)
20
25
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
10ms
100ms
1s
10s
DC
0.1
0.01
0.1
VGS= -4.5V
SINGLE PULSE
RθJA= 125oC/W
TA= 25oC
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
3500
3000
2500
2000
1500
1000
500
0
0
f= 1 MHz
VGS= 0V
Ciss
Coss
Crss
4 8 12 16
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA=125oC/W
TA=25oC
30
20
10
0
0.001
0.01
0.1
1
10 100 1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
R θJA (t) = r(t) * R θJA
R θJA = 125°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1 /t2
10 100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS6375 Rev. C

4페이지










FDS6375 전자부품, 판매, 대치품
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A

7페이지


구       성 총 8 페이지수
다운로드[ FDS6375.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
FDS6375

Single P-Channel 2.5V Specified PowerTrenchTM MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵