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부품번호 | FDS6375 기능 |
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기능 | Single P-Channel 2.5V Specified PowerTrenchTM MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
February 1999
FDS6375
Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• DC/DC converter
• Load switch
• Battery Protection
Features
• -8.0 A, -20 V. RDS(on) = 0.024 Ω @ VGS = -4.5 V
RDS(on) = 0.032 Ω @ VGS = -2.5 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON).
• High power and current handling capability.
D
D
D
D
54
63
SO-8
G
SS
S
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Ratings
-20
±8
-8.0
-50
2.5
1.2
1
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS6375
FDS6375
13’’
Tape Width
12mm
Quantity
2500 units
©1999 Fairchild Semiconductor Corporation
FDS6375 Rev. C
Typical Characteristics (continued)
5
ID= -8.0A
4
3
2
1
0
05
VDS= -5V
-10V
-15V
10 15
Qg, GATE CHARGE (nC)
20
25
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
10ms
100ms
1s
10s
DC
0.1
0.01
0.1
VGS= -4.5V
SINGLE PULSE
RθJA= 125oC/W
TA= 25oC
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
3500
3000
2500
2000
1500
1000
500
0
0
f= 1 MHz
VGS= 0V
Ciss
Coss
Crss
4 8 12 16
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA=125oC/W
TA=25oC
30
20
10
0
0.001
0.01
0.1
1
10 100 1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
R θJA (t) = r(t) * R θJA
R θJA = 125°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1 /t2
10 100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS6375 Rev. C
4페이지 SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS6375 | Single P-Channel 2.5V Specified PowerTrenchTM MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |