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부품번호 | FDS6670A 기능 |
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기능 | Single N-Channel/ Logic Level/ PowerTrenchTM MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
July 1998
FDS6670A
Single N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
13 A, 30 V. RDS(ON) = 0.008 Ω @ VGS = 10 V
RDS(ON) = 0.010Ω @ VGS = 4.5 V.
Fast switching speed.
Low gate charge (35 nC tyical).
High performance trench technology for
extremely low RDS(ON).
High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
5
6
7
8
SOIC-16
4
3
2
1
Absolute Maximum Ratings
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
TA = 25oC unless other wise noted
(Note 1a)
PD Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
FDS6670A
30
±20
13
50
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
FDS6670A Rev.D1
Typical Electrical Thermal Characteristics
10
I D = 13A
8
6
VDS= 5V
10V
15V
4
2
0
0 10 20 30 40 50 60 70 80
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
30 RDS(ON) LIMIT
10
5
2
1
0.5
VGS =10V
0.1 SINGLE PULSE
0.05 RθTJAA=A=12255°°CC/W
100us
1ms
10ms
1s100ms
10s
DC
0.01
0.05 0.1
0.5 1 2
5 10
VDS , DRAIN-SOURCE VOLTAGE (V)
30 50
Figure 9. Maximum Safe Operating Area.
7000
4000
2000
Ciss
1000
Coss
500
f = 1 MHz
200 VGS = 0 V
Crss
100
0.1
0.2
0.5 1
2
5 10
VDS , DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
SINGLE PULSE
RθJA =125°C/W
TA = 25°C
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.01
0.1
t1 , TIME (sec)
1
R θJA (t) = r(t) * R θJA
R θJA = 125°C/W
P(pk)
t1
t2
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 /t2
10 100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6670A Rev.D1
4페이지 SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ FDS6670A.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS6670A | Single N-Channel/ Logic Level/ PowerTrenchTM MOSFET | Fairchild Semiconductor |
FDS6670AS | 30V N-Channel PowerTrench SyncFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |