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부품번호 | FDS6679Z 기능 |
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기능 | 30 Volt P-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
October 2001
FDS6679Z
30 Volt P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• –13 A, –30 V. RDS(ON) = 9 mΩ @ VGS = –10 V
RDS(ON) = 13 mΩ @ VGS = – 4.5 V
• Extended VGSS range (–25V) for battery applications
• ESD protection diode (note 3)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6679Z
FDS6679Z
13’’
©2001 Fairchild Semiconductor Corporation
54
63
72
81
Ratings
–30
–25/+20
–13
–50
2.5
1.2
1.0
–55 to +175
50
25
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
FDS6679Z Rev C (W)
Typical Characteristics
10
ID = -13A
8
6
4
VDS = -5V
-10V
-15V
2
0
0 10 20 30 40 50 60 70
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = -10V
0.1
SINGLE PULSE
RθJA = 125oC/W
T A = 25oC
100µs
1ms
10ms
100ms
1s
DC
0.01
0.01
0.1 1 10
-V DS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
5000
4000
CISS
f = 1 MHz
VGS = 0 V
3000
2000
C OSS
1000
CRSS
0
0 5 10 15 20 25
-VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
0.1 1
t1, TIME (sec)
10
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 125oC/W
P(pk)
t1
t2
TJ - TA = P * Rθ JA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
10
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100
1000
FDS6679Z Rev C(W)
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS6679 | 30 Volt P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS6679AZ | P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |