FDS6680S Datasheet PDF - Fairchild Semiconductor
| Part Number | FDS6680S | |
| Description | 30V N-Channel PowerTrench SyncFET | |
| Manufacturers | Fairchild Semiconductor | |
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February 2000
PRELIMINARY
FDS6680S
30V N-Channel PowerTrench SyncFET™
General Description
The FDS6680S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6680S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6680S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDS6680 in parallel with a Schottky diode.
Applications
• DC/DC converter
• Motor drives
Features
• 11.5 A, 30 V.
RDS(ON) = 0.011 Ω @ VGS = 10 V
RDS(ON) = 0.016 Ω @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (17nC typical)
• High performance trench technology for extremely low
RDS(ON) and fast switching
• High power and current handling capability
D
D
D
D
G
SS
SO-8 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6680S
FDS6680S
13’’
2000 Fairchild Semiconductor Corporation
5
6
7
8
Ratings
30
±20
11.5
50
2.5
1.2
1
-55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS6680S Rev B (W)
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Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6680S.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
10nS/div
Figure 12. FDS6680S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6680).
0.01
100oC
0.001
0.0001
0
25oC
10 20
VDS, REVERSE VOLTAGE (V)
30
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/div
Figure 13. Non-SyncFET (FDS6680) body
diode reverse recovery characteristic.
FDS6680S Rev A (W)
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FDS6680S electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FDS6680S.PDF Datasheet ] | |
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