|
|
|
부품번호 | FDS6685 기능 |
|
|
기능 | P-Channel Logic Level PowerTrenchTM MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
March 1999
PRELIMINARY
FDS6685
P-Channel Logic Level PowerTrenchTM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• Battery protection
• Load switch
• Motor drives
Features
• -8.8 A, -30 V. RDS(ON) = 0.020 Ω @ VGS = -10 V
RDS(ON) = 0.035 Ω @ VGS = -4.5 V
±• Extended VGSS range ( 25V) for battery applications.
• Low gate charge (19nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON).
• High power and current handling capability.
D
D
D
D
5
6
SO-8
G
SS
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
7
8
4
3
2
1
Ratings
-30
±25
-8.8
-50
2.5
1.2
1
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS6685
FDS6685
13’’
Tape Width
12mm
Quantity
2500 units
1999 Fairchild Semiconductor Corporation
FDS6685 Rev. B
Typical Characteristics (continued)
10
ID = -8.8A
8
6
4
2
0
05
VDS = -5V
-10V
-15V
10 15 20 25 30 35
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics
100
RDS(ON) LIMIT
10
1
VGS = -10V
0.1
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area
2500
2000
1500
1000
500
0
0
CISS
f = 1 MHz
VGS = 0 V
COSS
CRSS
5 10 15 20 25
-VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics
50
SINGLE PULSE
40 RθJA = 125oC/W
TA = 25oC
30
20
10
0
0.001
0.01
0.1
1
10 100 1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.5
0.2
0.1
0.05
0.02
0.01
0 .0 0 5
D = 0.5
0.2
0.1
0 0. 5
0 0. 2
0.0 1
S i n g le P ul se
0 .0 0 2
0 .0 0 1
0 .00 0 1
00. 01
0.01
0.1
t 1, TIME (s e c )
1
R θJ A (t) = r(t) * R θJ A
R θJ A= 125°C /W
P(p k )
t1
t2
TJ - TA = P * RθJA ( t)
D u t y C y c l e, D = t 1 /t2
10 100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS6685 Rev. B
4페이지 SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ FDS6685.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FDS6680 | Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET | Fairchild Semiconductor |
FDS6680A | Single N-Channel/ Logic Level/ PowerTrenchTM MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |