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부품번호 | FDS6690A 기능 |
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기능 | Single N-Channel / Logic Level / PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
February 2007
FDS6690A
Single N-Channel, Logic-Level, PowerTrench® MOSFET
tm
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 11 A, 30 V.
RDS(ON) = 12.5 mΩ @ VGS = 10 V
RDS(ON) = 17.0 mΩ @ VGS = 4.5 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD DDDD
DD
SO-8
Pin 1 SO-8
SS SS SS GG
54
63
72
81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
EAS
TJ, TSTG
Single Pulse Avalanche Energy
(Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6690A
FDS6690A
13’’
Ratings
30
±20
11
50
2.5
1.0
96
–55 to +150
50
125
25
Tape width
12mm
Units
V
V
A
W
mJ
°C
°C/W
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDS6690A Rev E1 (W)
Typical Characteristics
10
ID = 11.0A
8
6
VDS = 10V
20V
15V
4
2
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10 RDS(ON) LIMIT
1
100¡
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1600
1200
800
Ciss
f = 1MHz
VGS = 0 V
Coss
400
Crss
0
0
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
100
10
Tj=25
¢
Tj=125
¢
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE (mS)
100
Figure 10. Unclamped Inductive Switching
Capability Figure
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
0.1 t1, TIME (sec)
1
10 100
Figure 11. Single Pulse Maximum Power Dissipation.
FDS6690A Rev E1 (W)
4페이지 | |||
구 성 | 총 6 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS6690 | Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET | Fairchild Semiconductor |
FDS6690A | Single N-Channel / Logic Level / PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |