|
|
|
부품번호 | FDS6975 기능 |
|
|
기능 | Dual P-Channel/ Logic Level/ PowerTrenchTM MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
February 1999
FDS6975
Dual P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
These P-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
-6 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V,
RDS(ON) = 0.045 Ω @ VGS = -4.5 V.
Low gate charge (14.5nC typical).
High performance trench technology for extremely low
RDS(ON).
High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
D2
D2
D1
D1
FD69S75
SO-8
G2
S2
pin 1
G1
S1
SO-8
SOT-223
5
6
7
8
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless otherwise noted
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1999 Fairchild Semiconductor Corporation
Ratings
-30
±20
-6
-20
2
1.6
1
0.9
-55 to 150
78
40
SOIC-16
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
FDS6975 Rev.C
Typical Electrical Characteristics (continued)
10
ID = -6A
8
6
V DS = -5V
-15V
-10V
4
2
0
0 6 12 18 24 30
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
30
10
RDS(ON) LIMIT
3
0.5
0.05
VGS = -10V
SINGLE PULSE
RθJA =135°C/W
TA = 25°C
100us
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
0.3
12
5 10
- VDS , DRAIN-SOURCE VOLTAGE (V)
30 50
Figure 9. Maximum Safe Operating Area.
3000
2000
1000
500
Ciss
Coss
200 f = 1 MHz
VGS = 0 V
Crss
100
0.1
0.2
0.5 1
2
5 10
- VDS , DRAIN TO SOURCE VOLTAGE (V)
20 30
Figure 8. Capacitance Characteristics.
30
25
20
15
10
5
0
0.01
SINGLE PULSE
RθJA =135°C/W
TA = 25°C
0.1 0.5
10
SINGLE PULSE TIME (SEC)
50 100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.01
0.1
t1 , TIME (sec)
1
R θJA (t) = r(t) * R θJA
R θJA = 135°C/W
P(pk)
t1
t2
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 /t2
10 100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6975 Rev.C
4페이지 SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ FDS6975.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FDS6975 | Dual P-Channel/ Logic Level/ PowerTrenchTM MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |