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FDS6984S 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FDS6984S은 전자 산업 및 응용 분야에서
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부품번호 FDS6984S 기능
기능 Dual Notebook Power Supply N-Channel PowerTrench SyncFET
제조업체 Fairchild Semiconductor
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FDS6984S 데이터시트, 핀배열, 회로
May 2000
PRELIMINARY
FDS6984S
Dual Notebook Power Supply N-Channel PowerTrench® SyncFET
General Description
The FDS6984S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6984S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
Features
Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky diode
8.5A, 30V RDS(on) = 0.019@ VGS = 10V
RDS(on) = 0.027@ VGS = 4.5V
Q1: Optimized for low switching losses
Low gate charge ( 5 nC typical)
5.5A, 30V RDS(on) = 0.040@ VGS = 10V
RDS(on) = 0.055@ VGS = 4.5V
5
6 Q1
7
Q2
8
4
3
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6984S
FDS6984S
13”
Q2 Q1
30 30
±20 ±20
8.5 5.5
30 20
2
1.6
1
0.9
-55 to +150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
©2000 Fairchild Semiconductor Corporation
FDS6984S Rev B(W)




FDS6984S pdf, 반도체, 판매, 대치품
Typical Characteristics: Q2
50
V GS = 10V
40
6.0V 5.0V
4.5V
30
4.0V
20
10
0
0
3.5V
12
VDS, DRAIN-SOURCE VOLTAGE (V)
3
Figure 1. On-Region Characteristics.
1.9
ID = 10A
VGS = 10V
1.6
1.3
1
0.7
0.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = 5V
40
30
o
TA = -55 C
25oC
125oC
20
10
0
1.5
2.5 3.5 4.5
VGS, GATE TO SOURCE VOLTAGE (V)
5.5
Figure 5. Transfer Characteristics.
2.6
VGS = 4.0V
2.2
1.8 4.5V
5.0V
1.4
6.0V
8.0V
1 10V
0.6
0
10 20 30 40
ID, DRAIN CURRENT (A)
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.06
0.05
0.04
0.03
0.02
0.01
0
2
ID = 5A
TA = 125 oC
TA = 25oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1 TA = 125oC
25oC
0.1
-55oC
0.01
0.001
0
0.2 0.4 0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6680S Rev B (W)

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FDS6984S 전자부품, 판매, 대치품
Typical Characteristics Q1
10
ID = 4.6A
8
6
4
2
0
02
VDS = 5V
15V
10V
46
Qg, GATE CHARGE (nC)
8
10
Figure 17. Gate Charge Characteristics.
700
600
500
400
300
200
100
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 18. Capacitance Characteristics.
100
RDS(ON) LIMIT
10
100µs
1ms
10ms
100ms
1
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25 oC
0.01
0.1
1s
10s
DC
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
30
20
10
0
0.01
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
0.1 1
t1, TIME (sec)
10
100
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.01
0.1
t 1, TIME (sec)
1
RθJA (t) = r(t) * R θJA
R θJA = 135°C/W
P(pk)
t1
t2
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 /t2
10 100
300
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6680S Rev B (W)

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