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PDF FDS6993 Data sheet ( Hoja de datos )
| Número de pieza | FDS6993 | |
| Descripción | Dual P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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June 2003
FDS6993
Dual P-Channel PowerTrench® MOSFET
General Description
These P-Channel MOSFETs are made
using FSC’s PowerTrench® technology.
They are packaged in a single SO-8 which is
designed to allow two MOSFETs to operate
independenly, each with it’s own heat sink.
The combination of silicon and package
technologies results in minimum board
space and cost.
Features
• Q1: P-Channel
–4.3A, –30V RDS(on) = 55mΩ @ VGS = –10V
RDS(on) = 85mΩ @ VGS = –4.5V
• Q2: P-Channel
–6.8A, –12V RDS(on) = 17mΩ @ VGS = –4.5V
RDS(on) = 24mΩ @ VGS = –2.5V
RDS(on) = 30mΩ @ VGS = –1.8V
• High power and handling capability in a widely
used surface mount package
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1 S
S1 S
S
5
6 Q2
7
8 Q1
4
3
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6993
FDS6993
13”
Q1 Q2
–30 –12
±25 ±8
–4.3 –6.8
–20 –20
2
1.6
1
0.9
–55 to +150
78
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2003 Fairchild Semiconductor Corporation
FDS6993 Rev C (W)
1 page  
Typical Characteristics: Q1
10
ID = -4.3A
8
6
4
VDS = -10V
-20V
-15V
2
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
12
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = -10V
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
700
f = 1 MHz
600 VGS = 0 V
500
Ciss
400
300
Coss
200
100 Crss
0
0
5 10 15 20 25
-VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 135°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 135oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6993 Rev C (W)
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDS6993.PDF ] | |
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