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PDF FDS7064A Data sheet ( Hoja de datos )
| Número de pieza | FDS7064A | |
| Descripción | 30V N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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May 2000
ADVANCE INFORMATION
FDS7064A
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS( ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 19 A, 30 V RDS(ON) = 6.5 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching
• Bottomless™ SO-8 package: Enhanced thermal
performance in industry-standard package size
DS
DS
DS
DS
D
Bottomless
SO-8
Pin 1 SO-8
SSSS SSGG
Bottom -sid e
Drain Con tact
5
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7064A
FDS7064A
13’’
Ratings
30
±12
19
60
3.9
–55 to +175
38
1
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2000 Fairchild Semiconductor Corporation
FDS7064A Rev A1(W)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FDS7064A.PDF ] | |
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