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부품번호 | FDS7066N7 기능 |
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기능 | 30V N-Channel PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
May 2003
FDS7066N7
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 23 A, 30 V
RDS(ON) = 4.5 mΩ @ VGS = 10 V
RDS(ON) = 5.5 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7066N7
FDS7066N7
13’’
2002 Fairchild Semiconductor Corporation
Ratings
30
±16
23
60
3.0
1.7
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS7066N7 Rev D2 (W)
Typical Characteristics
10
ID = 23A
8
VDS = 5V
10V
15V
6
4
2
0
0 10 20 30 40 50 60 70 80 90
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 85oC/W
TA = 25oC
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
6400
5600
4800
4000
3200
2400
1600
800
0
0
CISS
f = 1 MHz
VGS = 0 V
COSS
CRSS
6 12 18 24
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40 RθJA = 85°C/W
TA = 25°C
30
20
10
0
0.01
0.1 1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.001
SINGLE PULSE
0.01
0.1
1
t1, TIME (sec)
10
RθJA(t) = r(t) + RθJA
RθJA = 85oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDS7066N7 Rev D2 (W)
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS7066N3 | 30V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS7066N7 | 30V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |