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FDS7066SN3 데이터시트 PDF




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부품번호 FDS7066SN3 기능
기능 30V N-Channel PowerTrench SyncFET
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FDS7066SN3 데이터시트, 핀배열, 회로
January 2004
FDS7066SN3
30V N-Channel PowerTrenchSyncFET
General Description
The FDS7066SN3 is designed to replace a single SO-8
FLMP MOSFET and Schottky diode in synchronous
DC:DC power supplies. This 30V MOSFET is designed
to maximize power conversion efficiency, providing a
low RDS(ON) and low gate charge. The FDS7066SN3
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS7066SN3 as the low-side switch in a
synchronous rectifier is close to the performance of the
FDS7066N3 in parallel with a Schottky diode.
Applications
DC/DC converter
Motor drivesFeatures
Features
19 A, 30 V
RDS(ON) = 5.5 m@ VGS = 10 V
RDS(ON) = 6.0 m@ VGS = 4.5 V
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
Fast switching
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7066SN3
FDS7066SN3
13’’
2004 Fairchild Semiconductor Corporation
Ratings
30
±16
19
60
3.0
1.7
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS7066SN3 Rev C2 (W)




FDS7066SN3 pdf, 반도체, 판매, 대치품
Typical Characteristics
10
ID = 19A
8
VDS = 10V
6
20V
4
15V
2
0
0 10 20 30 40 50 60 70 80
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
1ms
10ms
100ms
1s
DC
100µs
VGS = 10V
0.1 SINGLE PULSE
RθJA = 85oC/W
TA = 25oC
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
6000
4500
3000
f = 1 MHz
VGS = 0 V
Ciss
1500
Coss
Crss
0
0
6 12 18 24
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 85°C/W
TA = 25°C
30
20
10
0
0.01
0.1 1 10
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
100
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.001
SINGLE PULSE
0.01
0.1
1
t1, TIME (sec)
10
RθJA(t) = r(t) + RθJA
RθJA = 85oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDS7066SN3 Rev C2 (W)

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FDS7066SN3 전자부품, 판매, 대치품
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™ ISOPLANAR™
POP™
Stealth™
ActiveArray™ FAST
LittleFET™
Power247™
SuperFET™
Bottomless™ FASTr™
MICROCOUPLER™ PowerSaver™
SuperSOT™-3
CoolFET™
FPS™
MicroFET™
PowerTrench
SuperSOT™-6
CROSSVOLTFRFET™
MicroPak™
QFET
SuperSOT™-8
DOME™
GlobalOptoisolator™ MICROWIRE™
QS™
SyncFET™
EcoSPARK™ GTO™
MSX™
QT Optoelectronics™ TinyLogic
E2CMOSTM
HiSeC™
MSXPro™
Quiet Series™
TINYOPTO™
EnSignaTM
I2C™
OCX™
RapidConfigure™
TruTranslation™
FACT™
ImpliedDisconnect™ OCXPro™
Across the board. Around the world.™ OPTOLOGIC
RapidConnect™
UHC™
SILENT SWITCHERUltraFET
The Power Franchise™
OPTOPLANAR™ SMART START™ VCX™
Programmable Active Droop™
PACMAN™
SPM™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANY LIABILITY
ARISING OUT OF THEAPPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEYANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I8

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관련 데이터시트

부품번호상세설명 및 기능제조사
FDS7066SN3

30V N-Channel PowerTrench SyncFET

Fairchild Semiconductor
Fairchild Semiconductor
FDS7066SN3

30V N-Channel PowerTrench SyncFET

Fairchild Semiconductor
Fairchild Semiconductor

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