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부품번호 | FDS7760A 기능 |
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기능 | N-Channel Logic Level PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
February 2000
PRELIMINARY
FDS7760A
N-Channel Logic Level PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
• DC/DC converter
• Load switch
• Motor drives
Features
• 15 A, 30 V. RDS(ON) = 5.5 mΩ @ VGS = 10 V
RDS(ON) = 8 mΩ @ VGS = 4.5 V.
• Low gate charge (37nC typical)
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON) .
• High power and current handling capability.
D
D
D
D
G
SO-8
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS7760A
FDS7760A
13’’
5
6
7
8
Ratings
30
±20
15
60
2.5
1.2
1
-55 to +150
50
50 (10 sec)
30
Tape Width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
1999 Fairchild Semiconductor Corporation
FDS7760A Rev. B (W)
Typical Characteristics
10
ID = 7.5A
8
6
VDS = 5V
15V
10V
4
2
0
0 10 20 30 40 50 60
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
0.1
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
6000
5000
4000
3000
2000
1000
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.01
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
0.1 1
10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 125 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS7760A Rev. B (W)
4페이지 SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS7760A | N-Channel Logic Level PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |