|
|
|
부품번호 | FDS8433A 기능 |
|
|
기능 | Single P-Channel 2.5V Specified MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
October 1998
PRELIMINARY
FDS8433A
Single P-Channel 2.5V Specified MOSFET
General Description
This P-Channel enhancement mode power field effect
transistors is produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density processis especially tailored to minimize
on-state resistance and provide superior switching
performance.
Applications
• Load switch
• DC/DC converter
• Battery protection
Features
• -5 A, -20 V. RDS(on) = 0.045 Ω @ VGS = -4.5 V
RDS(on) = 0.070 Ω @ VGS = -2.5 V
• Fast switching speed.
• High density cell design for extremely low RDS(on).
• High power and current handling capability.
D
D
D
D
5
6
SO-8
G
SS
S
7
8
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
4
3
2
1
FDS8433A
-20
±8
-5
-50
2.5
1.2
1
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS8433A
FDS8433A
13’’
Tape Width
12mm
Quantity
2500 units
©1998 Fairchild Semiconductor Corporation
FDS8433A Rev. B1
Typical Characteristics (continued)
5
I D =-5.0A
4
3
VDS= -5V
-15V
-10V
2
1
0
0 4 8 12 16 20
Qg , GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
100
10 RDS(ON) LIMIT
1
VGS = -4.5V
0.1 SINGLE PULSE
RθJA = 125°C/W
T A = 25°C
100us
1ms
10ms
1s100ms
10s
DC
0.01
0.1 0.2
0.5 1
2
5 10 20
-VDS , DRAIN-SOURCE VOLTAGE (V)
50
Figure 9. Maximum Safe Operating Area.
3000
2000
1000
500
Ciss
Coss
200
100 f = 1 MHz
VGS = 0 V
50
0.1
0.2
0.5 1
2
5
-V DS, DRAIN TO SOURCE VOLTAGE (V)
Crss
10 20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA=125°C/W
TA= 25°C
30
20
10
0
0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0 .5
0 .2
0 .1
0.05
0.02
0.01
0.005
D = 0.5
0 .2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0 .0 0 0 1
0.001
0.01
0.1
t1 , TIM E (sec)
1
R θJA (t) = r(t) * R θJA
R θJA =125°C /W
P (p k )
t1
t2
TJ - TA = P * R θJA (t)
D uty C y cle, D = t1 /t2
10 100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient themal response will change depending on the circuit board design.
FDS8433A Rev. B1
4페이지 SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ FDS8433A.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FDS8433 | Single P-Channel 2.5V Specified MOSFET | Fairchild Semiconductor |
FDS8433A | Single P-Channel 2.5V Specified MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |