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부품번호 | FDS8926A 기능 |
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기능 | Dual N-Channel Enhancement Mode Field Effect Transistor | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
February 1998
FDS8926A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These devices
are particularly suited for low voltage applications such as disk
drive motor control, battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
Features
5.5 A, 30 V. RDS(ON) = 0.030 Ω @ VGS = 4.5 V
RDS(ON) = 0.038 Ω @ VGS = 2.5 V.
High density cell design for extremely low RDS(ON).
Combines low gate threshold (fully enhanced at 2.5V) with
high breakdown voltage of 30 V.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
D2
D2
D1
D1
F8D9S26A
SO-8
G2
S2
pin 1
G1
S1
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
5
6
7
8
FDS8926A
30
±8
5.5
20
2
1.6
1
0.9
-55 to 150
78
40
SOIC-16
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
FDS8926A Rev.B
Typical Electrical And Thermal Characteristics
5
ID = 5.5A
4
3
2
1
0
05
VDS = 5V
10V
15V
10 15
Qg , GATE CHARGE (nC)
20
25
Figure 7. Gate Charge Characteristics.
3000
1000
500
200
Ciss
Coss
80 f = 1 MHz
VGS = 0V
C rss
30
0.1
0.4 1 2
5 10
VDS , DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
10 RDS(ON) LIMIT
3
1
0.3
0.1 VGS = 4.5V
SINGLE PULSE
0.03 RθJA =135 °C/W
TA = 25°C
0.01
0.1 0.2
0.5
1
2
1m1s00us
10ms
100ms
1s
10s
DC
5 10 20 30
VDS , DRAI N-SOURCE VOLTAGE (V)
50
Figure 9. Maximum Safe Operating Area.
30
25
20
15
10
5
0
0.01
SINGLE PULSE
R θJA =135° C/W
TA = 25°C
0.1 0.5 1
10
SINGLE PULSE TIME (SEC)
50 100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
t1 , TIME (sec)
1
R θJA (t) = r(t) * R θJA
R θJA =135 °C/W
P(pk)
t1 t 2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1 /t2
10 100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8926A Rev.B
4페이지 SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FDS8926A | Dual N-Channel Enhancement Mode Field Effect Transistor | Fairchild Semiconductor |
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