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PDF FDV304P Data sheet ( Hoja de datos )
| Número de pieza | FDV304P | |
| Descripción | Digital FET/ P-Channel | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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August 1997
FDV304P
Digital FET, P-Channel
General Description
This P-Channel enhancement mode field effect transistors is
produced using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is tailored to minimize
on-state resistance at low gate drive conditions. This device is
designed especially for application in battery power applications
such as notebook computers and cellular phones. This device
has excellent on-state resistance even at gate drive voltages as
low as 2.5 volts.
Features
-25 V, -0.46 A continuous, -1.5 A Peak.
RDS(ON) = 1.1 Ω @ VGS = -4.5 V
RDS(ON) = 1.5 Ω @ VGS= -2.7 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Compact industry standard SOT-23 surface mount
package.
SOT-23
Mark:304
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current
- Continuous
- Pulsed
PD
TJ,TSTG
ESD
Maximum Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient
© 1997 Fairchild Semiconductor Corporation
GS
FDV304P
-25
-8
-0.46
-1.5
0.35
-55 to 150
6.0
357
Units
V
V
A
W
°C
kV
°C/W
FDV304P Rev.E1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FDV304P.PDF ] | |
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