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부품번호 | FDW2507N 기능 |
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기능 | Common Drain N-Channel 2.5V specified PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
March 2003
FDW2507N
Common Drain N-Channel 2.5V specified PowerTrench MOSFET
General Description
This monolithic common drain N-Channel MOSFET has
been designed using Fairchild Semiconductor’s
advanced PowerTrench process to optimize the RDS(ON)
@ VGS = 2.5v on special TSSOP-8 lead frame with all
the drains on one side of the package.
Applications
• Li-Ion Battery Pack
Features
• 7.5 A, 20 V.
RDS(ON) = 19 mΩ @ VGS = 4.5 V
RDS(ON) = 23 mΩ @ VGS = 2.5 V
• Isolated source and drain pins
• High performance trench technology for extremely
low RDS(ON) @ VGS = 2.5 V
• Low profile TSSOP-8 package
D
D
D
D
TSSOP-8
G2
S2
G1
S1
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2507N
FDW2507N
13’’
1
2
3
4
Ratings
20
±12
7.5
30
1.6
1.1
–55 to +150
77
114
Tape width
12mm
8
7
6
5
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2003 Fairchild Semiconductor Corporation
FDW2507N Rev C2
Typical Characteristics
5
ID = 7.5A
4
VDS = 5V
15V
3
10V
2
1
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 4.5V
0.1
SINGLE PULSE
RθJA = 114oC/W
TA = 25oC
100us
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
3000
2500
2000
CISS
f = 1MHz
VGS = 0 V
1500
1000
COSS
500
0
0
CRSS
4 8 12 16
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
RθJA = 114°C/W
TA = 25°C
0.1 1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA =114 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW2507N Rev C2
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ FDW2507N.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
FDW2507N | Common Drain N-Channel 2.5V specified PowerTrench MOSFET | Fairchild Semiconductor |
FDW2507NZ | Common Drain N-Channel 2.5V specified PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |