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PDF FDW2520C Data sheet ( Hoja de datos )
| Número de pieza | FDW2520C | |
| Descripción | Complementary PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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November 2000
FDW2520C
Complementary PowerTrench MOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC conversion
• Power management
• Load switch
Features
• Q1: N-Channel
6 A, 20 V.
RDS(ON) = 18 mΩ @ VGS = 4.5 V
RDS(ON) = 28 mΩ @ VGS = 2.5 V
• Q2: P-Channel
–4.4A, 20 V. RDS(ON) = 35 mΩ @ VGS = –4.5 V
RDS(ON) = 57 mΩ @ VGS = –2.5 V
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2520C
FDW2520C
13’’
Q1
1
2
3
4
Q2
8
7
6
5
Q1 Q2
20 –20
±12 ±12
6 –4.4
30 –30
1.0
0.6
–55 to +150
Units
V
V
A
W
°C
125 °C/W
208
Tape width
12mm
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDW2520C Rev C(W)
1 page  
Typical Characteristics: Q1
5
ID = 6A
4
3
2
VDS = 5V
10V
15V
1
0
0 2 4 6 8 10 12 14 16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
1ms
10ms
100ms
1s
10s
DC
VGS = 4.5V
0.1 SINGLE PULSE
RθJA = 208 oC/W
TA = 25oC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
2000
1750
1500
1250
1000
750
500
250
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
4 8 12 16
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
80
SINGLE PULSE
RθJA = 208 °C/W
TA = 25°C
60
40
20
0
0.0001 0.001
0.01
0.1
1
10 100 1000
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
FDW2520C Rev C(W)
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDW2520C.PDF ] | |
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